september 2001 ? 2001 fairchild semiconductor corporation FDFS2P103 rev c(w) FDFS2P103 integrated p-channel powertrench ? ? ? ? mosfet and schottky diode general description the FDFS2P103 combines the exceptional performance of fairchild's powertrench mosfet technology with a very low forward voltage drop schottky barrier rectifier in an so-8 package. this device is designed specifically as a single package solution for dc to dc converters. it features a fast switching, low gate charge mosfet with very low on- state resistance. the independently connected schottky diode allows its use in a variety of dc/dc converter topologies. features ? ?5.3 a, ?30v r ds(on) = 59 m ? @ v gs = ?10 v r ds(on) = 92 m ? @ v gs = ?4.5 v ? v f < 0.52 v @ 1 a (t j = 125 c) v f < 0.57 v @ 1 a (t j = 25 c) ? schottky and mosfet incorporated into single power surface mount so-8 package ? electrically independent schottky and mosfet pinout for design flexibility a a s g c c d d pin 1 so-8 8 1 7 2 6 3 5 4 a a s g c c d d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss mosfet drain-source voltage ? 30 v v gss mosfet gate-source voltage 25 v i d drain current ? continuous (note 1a) ? 5.3 a ? pulsed ? 20 power dissipation for dual operation 2 power dissipation for single operation (note 1a) 1.6 (note 1b) 1 p d (note 1c) 0.9 w t j , t stg operating and storage junction temperature range ? 55 to +150 c v rrm schottky repetitive peak reverse voltage 30 v i o schottky average forward current (note 1a) 1 a package marking and ordering information device marking device reel size tape width quantity FDFS2P103 FDFS2P103 13?? 12mm 2500 units FDFS2P103
FDFS2P103 rev c(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?23 mv/ c i dss zero gate voltage drain current v ds = ?24 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 25 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?25 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?1 ?1.7 ?3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 4.5 mv/ c r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?5.3 a v gs = ?4.5 v, i d = ?4 a v gs =?10 v, i d =?5.3a, t j =125 c 46 70 63 59 92 88 m ? i d(on) on?state drain current v gs = ?10 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?5v, i d = ?5.3 a 10 s dynamic characteristics c iss input capacitance 528 pf c oss output capacitance 132 pf c rss reverse transfer capacitance v ds = ?15 v, v gs = 0 v, f = 1.0 mhz 70 pf switching characteristics (note 2) t d(on) turn?on delay time 7 14 ns t r turn?on rise time 13 24 ns t d(off) turn?off delay time 14 25 ns t f turn?off fall time v dd = ?15 v, i d = ?1 a, v gs = ?10 v, r gen = 6 ? 9 17 ns q g total gate charge 5.3 8 nc q gs gate?source charge 2.2 nc q gd gate?drain charge v ds = ?15 v, i d = ?5.3 a, v gs = ?5 v 1.6 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?1.3 a (note 2) ?0.7 ?1.2 v schottky diode characteristics i r reverse leakage v r = 30 v t j = 25 c 15 100 a t j = 125 c 6 30 ma v f forward voltage i f = 1a t j = 25 c 0.41 0.57 v t j = 125 c 0.32 0.52 v FDFS2P103
FDFS2P103 rev c(w) thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r ja thermal resistance, junction-to-ambient (note 1c) 135 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 78c/w when mounted on a 0.5in 2 pad of 2 oz copper b) 125c/w when mounted on a 0.02 in 2 pad of 2 oz copper c) 135c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDFS2P103
FDFS2P103 rev c(w) typical characteristics 0 10 20 30 0123456 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -10v -3.0v -3.5v -4.0v -4.5v -5.0v -6.0v 0.8 1 1.2 1.4 1.6 1.8 2 0 6 12 18 24 30 -i d , drain current (a) r ds(on) , normalized drain-source on-resistanc e v gs =-4.0v -4.5v -6.0v -7.0v -8.0v -10v -5.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -5.3a v gs = -10v 0 0.05 0.1 0.15 0.2 0.25 246810 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -2.8a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 3 6 9 12 15 11.522.533.544.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs =0 v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDFS2P103
FDFS2P103 rev c(w) typical characteristics 0 2 4 6 8 10 0246810 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -5.3a v ds = -10v -15v -20v 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 v f , forward voltage (v) i f , forward leakage current (a) t j = 25 o c t j = 125 o c 1.00e-07 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 0 10 20 30 40 50 60 v r , reverse voltage (v) i r , reverse leakage current (a) t j = 25 o c t j = 125 o c figure 9. schottky diode forward voltage. figure 10. schottky diode reverse current. 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 135 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. FDFS2P103
soic(8lds) packag ing configuration: figure 1.0 components leader tape 1680mm minimum or 210 empty pockets tr a i l e r ta p e 640mm minimum or 80 empty pockets so ic(8lds) tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments pa ck aging option soic (8lds) packaging information standard (no flow code) l86z f011 pa ck aging type reel size tnr 13? dia rail/tube - tnr 13? dia qty per reel/tu b e/bag 2,500 95 4,000 box dimension (mm) 355x333x40 530x130x83 355x333x40 max qty per box 5,000 30,000 8,000 d84z tnr 7? dia 500 193x183x80 2,000 weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 w ei ght p e r reel (kg) 0.6060 - 0.9696 0.1182 packaging description: soic-8 parts are shipped in tape. the carrier tape is made from a dissipative (car bon filled) polycarbonate resin. the cover tape is a multilayer film (heat activated adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. these reeled parts in standard option are shipped with 2,500 units per 13? or 330cm diameter reel. the reels are dark blue in color and is made of polystyrene plastic (anti- static coated). other option comes in 500 units per 7? or 177cm diameter reel. this and some other options are further described in the packaging information table. these full reels are individually barcode labeled and placed inside a s tandard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. one box contains two reels maximum. and these boxes are placed inside a barcode labeled shipping box which comes i n different sizes depending on the num ber of parts shipped. f 852 nds 9959 soic-8 unit orientation f 852 nds 9959 pin 1 f 852 nds 9959 f 852 nds 9959 f 852 nds 9959 barcode label barcode label 355mm x 333mm x 40mm intermediate container for 13? reel option 193mm x 183mm x 80mm pizza box for standard option barcode label embossed esd marking at tention observe preca uti ons for handling electrostatic sensitive devices at tention observe preca uti ons for handling electrostatic sensitive devices at tention observe preca uti ons for handling electrostatic sensitive devices static dissipative embossed carrier tape f63tnr label antistatic cover tape customized label a t te nt io n o bs er ve p r ec auti ons for h andli ng ele c tro st ati c s en s iti ve devi c es a t te nt io n o bs er ve p r ec auti ons for h andli ng ele c tro st ati c s en s iti ve devi c es 3000 lot: cbvk741b019 fsid: fds9953a d/c1: z9842ab qty1: spec rev: spec: qty: 2500 d/c2: qty2: cpn: cbvk741b019 fds9953a barcode label sample f airchild semiconductor corporation (f63t nr)
dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc soic (8lds) (12mm) 5.30 +/-0.10 6.50 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 10.25 min 5.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 2.1 +/-0.10 0.450 +/- 0.150 9.2 +/-0.3 0.06 +/-0.02 p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 12mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 ? 0.606 11.9 ? 15.4 12mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 ? 0.606 11.9 ? 15.4 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed soic(8lds) embossed carrier tape configuration: figure 3.0 soic(8lds) reel configuration: figure 4.0
soic-8 (fs pkg code s1) 1 : 1 scale 1:1 on letter size paper di me n si o n s s h ow n be l ow a re in : inches [millimeters] part weight per unit (gram): 0.0774 soic-8 package dimensions september 1998, rev. a 9 ?2000 fairchild semiconductor international
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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